| PART |
Description |
Maker |
| CLE230 CLE231 CLE232 CLE233 |
High Power Aluminum Gallium Arsenide IREDs
|
List of Unclassifed Manufacturers
ETC
Clairex Technologies, Inc
|
| CLE331W |
Aluminum Gallium Arsenide IRED Point Source Die
|
Clairex Technologies, Inc
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier
180V gallium arsenide schottky rectifier
|
IXYS
|
| EEUEBXXX EEUEB1A101 EEUEB1A101S EEUEB1A221 EEUEB1A |
Aluminum Electronic Capacitor
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 450 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 200 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 33 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 220 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 100 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63 V, 3.3 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 1000 uF, THROUGH HOLE MOUNT
KJL 79C 79#22 PIN RECP CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 4.7 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 1000 uF, THROUGH HOLE MOUNT
Aluminum Electrolytic Capacitor/EB CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 1000 uF, THROUGH HOLE MOUNT
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
|
